Memristor Technology: Synthesis and Modeling for Sensing and Security Applications by Heba Abunahla & Baker Mohammad

Author:Heba Abunahla & Baker Mohammad
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

The I–V plots of devices made from symmetric metal oxide/metal stacks, dried at 80 °C, are shown in Fig. 2.12. Compared with Fig. 2.11 results, Fig. 2.12a shows that memristors made with Cu/Cu contacts remain ohmic regardless of the change in drying temperature made. However, devices based on symmetric Ti/Ti contacts, as in Fig. 2.12b results, exhibit a resistive switching behavior where both the positive and negative sweep half-cycles display a clockwise hysteresis loop orientation.

Fig. 2.12 I–V curve characteristics of microscale HfO2–x memristors processed at 80 °C, with symmetric bottom/top electrodes: a Cu/Cu, b Ti/Ti, c Al/Al, and d Pd/Pd. Voltage sweeps of ±5, ±7, and ±10 V were, respectively, applied in that order

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